FQB7N10L Datasheet, MOSFET, Fairchild Semiconductor

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FQB7N10L Features and benefits

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* 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% av.

FQB7N10L Application

such as high efficiency switching DC/DC converters, and DC motor control. D TM Features
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FQB7N10L Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

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